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| HMC-ALH435 v03.1009 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz Features Noise Figure: 2.2 dB @ 12 GHz Gain: 13 dB @ 14 GHz P1dB Output Power: +16 dBm @ 12 GHz Supply Voltage: +5V @ 30 mA Die Size: 1.48 x 0.9 x 0.1 mm 1 LOW NOISE AMPLIFIERS - CHIP Typical Applications This HMC-ALH435 is ideal for: * Wideband Communication Systems * Surveillance Systems * Point-to-Point Radios * Point-to-Multi-Point Radios * Military & Space * Test Instrumentation * VSAT Functional Diagram General Description The HMC-ALH435 is a GaAs MMIC HEMT Low Noise Wideband Amplifier die which operates between 5 and 20 GHz. The amplifier provides 13 dB of gain, 2.2 dB noise figure at 12 GHz and +16 dBm of output power at 1 dB gain compression while requiring only 30 mA from a +5V supply voltage. The HMC-ALH435 amplifier is ideal for integration into Multi-ChipModules (MCMs) due to its small size. Electrical Specifi cations, TA = +25 C, Vdd= +5V Parameter Frequency Range Gain Gain Variation over Temperature Noise Figure Input Return Loss Output Return Loss Output IP3 Output Power for 1 dB Compression Supply Current (Idd) (Vdd = 5V, Vgg1 = -0.5V Typ., Vgg2 = 1.5V Typ) *Unless otherwise indicated, all measurements are from probed die 10 Min. Typ. 5 - 20 13 0.02 2.2 5 10 25 16 30 2.6 Max. Units GHz dB dB / C dB dB dB dBm dBm mA 1 - 180 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH435 v03.1009 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz Linear Gain vs. Frequency 16 Noise Figure vs. Frequency 4 OUTPUT RETURN LOSS (dB) 1 LOW NOISE AMPLIFIERS - CHIP 1 - 181 12 GAIN (dB) 3 8 2 4 1 0 2 6 10 14 18 22 26 30 FREQUENCY (GHz) 0 4 6 8 10 12 14 16 18 20 FREQUENCY (GHz) Input Return Loss vs. Frequency 0 Output Return Loss vs. Frequency 0 -2 RETURN LOSS (dB) RETURN LOSS (dB) 2 6 10 14 18 22 26 30 -4 -4 -8 -6 -12 -8 -16 -10 FREQUENCY (GHz) -20 2 6 10 14 18 22 26 30 FREQUENCY (GHz) P1dB vs. Frequency For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH435 v03.1009 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz 1 LOW NOISE AMPLIFIERS - CHIP Absolute Maximum Ratings Drain Bias Voltage RF Input Power Channel Temperature Continuous Power Pdiss (T = 85 C) derate 4.7 mW/ C above 85 C Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +5.5 Vdc 15 dBm 180 C 0.45 W 213.3 C/W -65 to +150 C -55 to +85 C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004" SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE .002" [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 182 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH435 v03.1009 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Gate control for amplifier. Please follow "MMIC Amplifier Biasing Procedure" application note. See assembly for required external components. Interface Schematic 1 LOW NOISE AMPLIFIERS - CHIP 1 - 183 2 Vgg1 3 Vgg2 Gate control for amplifier. Please follow "MMIC Amplifier Biasing Procedure" application note. See assembly for required external components. This pad is AC coupled and matched to 50 Ohms. 4 RFOUT 5 Vdd Power Supply Voltage for the amplifier. See assembly for required external components. Die bottom GND Die bottom must be connected to RF/DC ground. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH435 v03.1009 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz 1 LOW NOISE AMPLIFIERS - CHIP Assembly Diagram Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier. Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output. 1 - 184 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC-ALH435 v03.1009 GaAs HEMT MMIC LOW NOISE AMPLIFIER, 5 - 20 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") 1 LOW NOISE AMPLIFIERS - CHIP 1 - 185 RF Ground Plane 0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD 0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2. 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 C and a tool temperature of 265 C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 C. DO NOT expose the chip to a temperature greater than 320 C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding RF bonds made with 0.003" x 0.0005" ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001" (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com |
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